SK hynix’ new 1anm tech will allow super-fast LPDDR4-4266 memory for phones July 12, 2021 by admin Tweet SK hynix has announced today its latest 1anm DRAM node, the company’s fourth-gen 10nm memory process. The 1anm node is produced utilizing EUV tech and enables faster and more efficient DRAM chips. Read more… Neowin Related Posts:SK Hynix set to invest $75 billion in AI through 2028Samsung unveils 36GB HBM3E 12H DRAM, potentially…Samsung announces its fastest 24Gbps GDDR6 DRAM for…If you missed the Samsung 980 Pro deal, here's a…Samsung begins mass-producing its 'most advanced'…
