SK hynix’ new 1anm tech will allow super-fast LPDDR4-4266 memory for phones July 12, 2021 by admin Tweet SK hynix has announced today its latest 1anm DRAM node, the company’s fourth-gen 10nm memory process. The 1anm node is produced utilizing EUV tech and enables faster and more efficient DRAM chips. Read more… Neowin Related Posts:At least some of its DRAM products are indeed…Samsung unveils 36GB HBM3E 12H DRAM, potentially…Google discloses new Rowhammer technique that alters…Samsung announces its fastest 24Gbps GDDR6 DRAM for…If you missed the Samsung 980 Pro deal, here's a…
